【2h】

Room-temperature single-electron junction.

机译:室温单电子结。

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摘要

The design, realization, and test performances of an electronic junction based on single-electron phenomena that works in the air at room temperature are hereby reported. The element consists of an electrochemically etched sharp tungsten stylus over whose tip a nanometer-size crystal was synthesized. Langmuir-Blodgett films of cadmium arachidate were transferred onto the stylus and exposed to a H2S atmosphere to yield CdS nanocrystals (30-50 angstrom in diameter) imbedded into an organic matrix. The stylus, biased with respect to a flat electrode, was brought to the tunnel distance from the film and a constant gap value was maintained by a piezo-electric actuator driven by a feedback circuit fed by the tunneling current. With this set-up, it is possible to measure the behavior of the current flowing through the quantum dot when a bias voltage is applied. Voltage-current characteristics measured in the system displayed single-electron trends such as a Coulomb blockade and Coulomb staircase and revealed capacitance values as small as 10(-19) F.
机译:特此报道了基于单电子现象的电子结在室温下在空气中起作用的设计,实现和测试性能。该元件由电化学蚀刻的尖锐钨笔组成,在其尖端上合成了纳米级晶体。将花生四烯酸镉的Langmuir-Blodgett薄膜转移到触控笔上,并暴露在H2S气氛中,以产生嵌入有机基质中的CdS纳米晶体(直径为30-50埃)。使相对于平坦电极偏置的触针达到距薄膜的隧道距离,并且通过由通过隧道电流馈送的反馈电路驱动的压电致动器来保持恒定的间隙值。通过这种设置,可以在施加偏置电压时测量流过量子点的电流的行为。在系统中测得的电压-电流特性显示出单电子趋势,例如库仑阻塞和库仑阶梯,并显示出电容值小至10(-19)F。

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