首页> 外国专利> LEAD FRAME HAVING BARRIER LAYER FOR FINE PATTERN AND PITCH REALIZATION AND METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR PACKAGE HAVING THE SAME

LEAD FRAME HAVING BARRIER LAYER FOR FINE PATTERN AND PITCH REALIZATION AND METHOD OF MANUFACTURING THE SAME AND SEMICONDUCTOR PACKAGE HAVING THE SAME

机译:用于精细图形和间距实现的具有引线框架的阻挡层及其制造方法和具有该框架的半导体封装

摘要

Disclosed are a lead frame including a barrier layer for fine pattern and pitch implementation, designed for implementing a fine pattern and a fine pitch by arranging the barrier layer between a lead line and a metal bump with a very thin thickness, a manufacturing method thereof, and a semiconductor package thereof. The lead frame including a barrier layer for fine pattern and pitch implementation according to the present invention includes the lead line which has an upper side and a lower side and includes a through hole passing through the upper and lower sides and a solar ball attachment side arranged on the lower side; a resin layer inserted into the through hole of the lead line; the metal bump arranged on the upper sides of the resin layer and the lead line; and the barrier layer arranged on the lower side overlapping with the metal bump.
机译:公开了一种包括用于精细图案和间距实现的阻挡层的引线框架,其制造方法,该引线框被设计用于通过将阻挡层布置在引线和具有非常薄的厚度的金属凸块之间来实现精细图案和精细间距。及其半导体封装。根据本发明的包括用于精细图案和间距实现的阻挡层的引线框架包括具有上侧和下侧的引线,并包括穿过上侧和下侧的通孔以及布置的太阳能球附接侧。在下侧树脂层插入引线的通孔中;金属凸块设置在树脂层和引线的上侧。阻挡层设置在与金属凸块重叠的下侧。

著录项

  • 公开/公告号KR20180035968A

    专利类型

  • 公开/公告日2018-04-09

    原文格式PDF

  • 申请/专利权人 SIMMTECH CO. LTD.;

    申请/专利号KR20160125431

  • 发明设计人 LEE JI SOO;YOU MUN SANG;CHOI EUN KUK;

    申请日2016-09-29

  • 分类号H01L23/495;H01L21/48;H01L23/31;

  • 国家 KR

  • 入库时间 2022-08-21 12:40:23

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