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semiconductor device having metallic nanodroplet for enhancement of photoemission in off-resonant plasmon

机译:具有金属纳米液滴以增强非共振等离子体激元中的光发射的半导体器件

摘要

The present invention provides a semiconductor device having an improved photoelectron emission property by using an electrostatic force of Coulomb in an off-resonant plasmon. According to an embodiment of the present invention, the semiconductor device having a metal nano-droplet for enhancement of a photoelectron emission property in an off-resonant plasmon has an active layer including metal nano-droplets separated in an island form on the upper part of a GaAs/AlGaAs quantum well layer.
机译:本发明提供一种通过在非共振等离子体激元中使用库仑的静电力而具有改善的光电子发射性质的半导体器件。根据本发明的实施例,具有用于增强非共振等离子体激元中的光电子发射性能的金属纳米滴的半导体器件在其上部具有包括以岛状分离的金属纳米滴的活性层。 GaAs / AlGaAs量子阱层。

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