a coating liquid for forming an n-type oxide semiconductor film, a method for manufacturing an n-type oxide semiconductor film, and a method for manufacturing a field effect transistor

摘要

The present invention provides a coating liquid for forming an n-type oxide semiconductor film, which comprises at least one Group A element selected from the group consisting of Sc, Y, Ln, B, Al and Ga; A group B element which is at least one of In and Tl; At least one element selected from the group consisting of Group 4 element, Group 5 element, Group 6 element, Group 7 element, Group 8 element, Group 9 element, Group 10 element, Group 14 element, Group 15 element and Group 16 element ; And a solvent for forming an n-type oxide semiconductor film.