首页> 外国专利> A kit of a thermosetting resin film and a second protective film forming film, a thermosetting resin film, a sheet for forming a first protective film, and a method of forming a first protective film for a semiconductor wafer

A kit of a thermosetting resin film and a second protective film forming film, a thermosetting resin film, a sheet for forming a first protective film, and a method of forming a first protective film for a semiconductor wafer

机译:热固性树脂膜和第二保护膜形成膜的套件,热固性树脂膜,用于形成第一保护膜的片以及形成用于半导体晶片的第一保护膜的方法

摘要

A method for forming a kit of a thermosetting resin film and a second protective film forming film, a thermosetting resin film, a first protective film forming sheet and a first protective film for a semiconductor wafer according to the present invention is characterized in that a thermosetting resin film (1) and a second protective film Wherein the thermosetting resin film (1) comprises a thermosetting resin film (1) and the thermosetting resin film (1) has a heat generation starting temperature measured by differential scanning calorimetry is not less than a heat generation starting temperature of the second protective film forming film The exothermic peak temperature of the second protective film forming film 2 is 100 to 200C and the difference between the exothermic peak temperatures of the thermosetting resin film 1 and the second protective film forming film 2 is less than 35C.;
机译:根据本发明的用于形成用于半导体晶片的热固性树脂膜和第二保护膜形成膜,热固性树脂膜,第一保护膜形成片和第一保护膜的套件的方法,其特征在于,热固性树脂膜(1)和第二保护膜,其中热固性树脂膜(1)包括热固性树脂膜(1),并且热固性树脂膜(1)具有通过差示扫描量热法测量的生热开始温度不小于2℃。第二保护膜形成膜的发热开始温度第二保护膜形成膜2的放热峰值温度为100〜200℃,热固性树脂膜1和第二保护膜形成膜2的放热峰值温度之差为100。低于35℃。

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