Method of Fabricating nano pattern using high etching contrast materials involving carborane complex

摘要

The present invention relates to a manufacturing method of a nanopattern using a high etching contrast material including a carborane complex. More specifically, the present invention uses a carborane complex having a strong oxygen etching resistance as a high etching contrast material in a nanopattern manufacturing process, and manufactures a nanopattern having a high integration degree by etching a substrate forming a mask pattern formed by using an induced self-assembly. Therefore, the nanopattern of the present invention can have a high aspect ratio in the oxygen etching, and an ultra-high integration degree nanopattern having a line width of 15 nm or less can be manufactured. The manufacturing method of a nanopattern comprises the following steps of: forming the mask pattern by the self-assembly of a block copolymer having a nitrogen group on the substrate; forming a high etching contrast film covering the mask pattern by a dipping method; and etching the substrate on which the mask pattern in which the high etching contrast film is formed is formed by an oxygen drying etching method, and forming the nanopattern on the upper part of the substrate.