首页> 外国专利> SILICON SUBSTRATE DIRECT BONDING METHOD AND APPARATUS SYSTEM THEREOF SILICON SUBSTRATE DIRECT BONDING APPARATUS ALIGN PARTS VERIFICATION METHOD

SILICON SUBSTRATE DIRECT BONDING METHOD AND APPARATUS SYSTEM THEREOF SILICON SUBSTRATE DIRECT BONDING APPARATUS ALIGN PARTS VERIFICATION METHOD

机译:硅基质直接结合方法及其装置系统硅基质直接结合装置对准部件的验证方法

摘要

The present invention provides a silicon substrate direct bonding method for bonding a silicon substrate with uniform contact. According to an aspect of the present invention, there is provided a method of directly joining a silicon substrate, comprising: loading a lower silicon substrate to a planar vacuum chuck of a lower stage, and forming an upper silicon substrate having flexibility on a downward convex curved surface vacuum chuck of an upper stage, A second step of raising the lower stage to contact the lower silicon substrate from one point (e.g., center) of the upper silicon substrate, a step of separating the upper silicon substrate from the lower convex curved surface vacuum chuck And a fourth step of further raising the lower stage to join the entire area of the lower silicon substrate and the upper silicon substrate from the one point to another part (e.g., outer edge).
机译:本发明提供了用于均匀接触地键合硅衬底的硅衬底直接键合方法。根据本发明的一个方面,提供了一种直接接合硅衬底的方法,该方法包括:将下部硅衬底装载到下部平台的平面真空吸盘,以及在向下的凸面上形成具有柔性的上部硅衬底。上级的弯曲表面真空吸盘,第二步骤,升高下级以从上硅基板的一个点(例如中心)接触下硅基板,将上硅基板与下凸曲面分开的步骤表面真空吸盘和第四步骤,进一步升高下平台,以将下硅基板和上硅基板的整个区域从一个点连接到另一部分(例如,外边缘)。

著录项

  • 公开/公告号KR101854880B1

    专利类型

  • 公开/公告日2018-05-04

    原文格式PDF

  • 申请/专利权人 주식회사 휴템;

    申请/专利号KR20160080958

  • 发明设计人 신홍수;도현정;최윤성;

    申请日2016-06-28

  • 分类号H01L21/18;H01L21/60;H01L21/66;H01L21/67;H01L21/68;H01L21/683;H01L23/544;

  • 国家 KR

  • 入库时间 2022-08-21 12:37:54

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