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CMOS Analogue Switch circuit

机译:CMOS模拟开关电路

摘要

The present invention relates to CMOS analog switches. The CMOS analog switch of the present invention improves the circuit structure, thereby biasing both terminal voltages of MOS devices which are switched on when the power supply voltage is applied to the substrate node of the MOS, and also, when switching off, Bias in the ground voltage (vss) state. When an abnormal high voltage is applied to both ends of the MOS device, the substrate voltage of the floating MOS device is biased to the ground voltage (vss). As a result, the threshold voltage and the conduction resistance are reduced and the frequency bandwidth is increased as compared with the conventional analog switches.;
机译:本发明涉及CMOS模拟开关。本发明的CMOS模拟开关改善了电路结构,从而偏置了当将电源电压施加到MOS的衬底节点时导通的MOS器件的端电压,以及当截止时对MOS器件的偏置进行偏置。接地电压(vss)状态。当向MOS器件的两端施加异常高电压时,浮置MOS器件的衬底电压被偏置为接地电压(vss)。结果,与传统的模拟开关相比,降低了阈值电压和导通电阻,并且增加了频率带宽。

著录项

  • 公开/公告号KR101863973B1

    专利类型

  • 公开/公告日2018-06-04

    原文格式PDF

  • 申请/专利权人 매그나칩 반도체 유한회사;

    申请/专利号KR20130079986

  • 发明设计人 설정훈;권오준;

    申请日2013-07-08

  • 分类号H03K17/687;

  • 国家 KR

  • 入库时间 2022-08-21 12:37:44

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