MTJ Magnetic tunnel junction structure with perpendicular magnetic anisotropy and Magnetic element including the same

摘要

An MTJ structure having perpendicular magnetic anisotropy and a magnetic element including the MTJ structure are provided. An MTJ structure having perpendicular magnetic anisotropy comprises a substrate, a perpendicular magnetic anisotropic inductive layer located on the substrate, the inverse perpendicular magnetic anisotropic inductive layer including an oxide based material, a perpendicular antiferromagnetic layer positioned on the perpendicular magnetic anisotropic inductive layer, A first ferromagnetic layer positioned on the perpendicular antiferromagnetic layer, the first ferromagnetic layer having perpendicular magnetic anisotropy, the tunneling barrier layer positioned on the first ferromagnetic layer, and the second ferromagnetic layer positioned on the tunneling barrier layer, Ferromagnetic layer. Therefore, the perpendicular antiferromagnetic layer generates vertical interaction between the perpendicular antiferromagnetic layer and the first ferromagnetic layer by generating a vertical interaction at the interface with the perpendicular magnetic anisotropy inducing layer.;