CRYSTALLINE ALIGNMENT LAYER LAMINATE STRUCTURE ELECTRONIC MEMORY AND METHOD FOR MANUFACTURING CRYSTALLINE ALIGNMENT LAYER LAMINATE STRUCTURE

摘要

The present invention provides a crystal orientation layer laminate structure capable of selecting a wide variety of materials for a base substrate and an electrode substrate, an electronic memory using the crystal orientation layer laminate structure, and a method for manufacturing the crystal orientation layer laminate structure. A crystal orientation layered laminate structure according to the present invention is a laminated structure of a crystal orientation layer laminated on a substrate and formed of any one of germanium, silicon, tungsten, germanium-silicon, germanium-tungsten, and silicon-tungsten, at the same time being stacked on the orientation control layer and the orientation control layer SbTe, Sb ₂ Te _3, BiTe, Bi ₂ Te _3, BiSe, and Bi ₂ Se is formed by the _three main component is any one of a first is oriented in a certain crystal orientation And a crystal orientation layer.