EUV PROJECTION EXPOSURE APPARATUS FOR EUV MICROLITHOGRAPHY AND METHOD FOR MICROLITHOGRAPHIC EXPOSURE

摘要

The present invention relates to a projection exposure apparatus for UV microlithography comprising an illumination system (1) for illuminating a pattern and a projection objective (2) for imaging said pattern on a photosensitive substrate (5). The projection objective (2) has a pupil plane (30) with an obscuration. The illumination system (1) produces light with an angular distribution. The angular distribution has illumination poles 35 and 36 extending over a range of polar angles and a range of azimuths in which the light intensity is greater than the illumination pole minimum. From the illumination poles facing the large polar angles, the dark zones 41 and 42 are excluded, where the light intensity is smaller than the illumination pole minimum value, which corresponds to the form of the obscuration of the pupil plane 30 Shape in some areas.;