THIN FILM SILICON NITRIDE BARRIER LAYERS ON FLEXIBLE SUBSTRATE

摘要

A polymeric substrate and at least one inorganic barrier layer, wherein the inorganic barrier layer has a stress of at most about 400 MPa and a stress of at least about 1.5 g / cm ³The density of the article. The article is preferably an optical device, such as an organic light emitting diode (OLED) or a photovoltaic (PV) module, and the silicon nitride barrier layer is deposited directly on the flexible polymeric substrate via plasma enhanced vapor deposition (PECVD).;