3D NAND METHODS OF TUNNEL OXIDE LAYER FORMATION IN 3D NAND MEMORY STRUCTURES AND ASSOCIATED DEVICES

摘要

3D NAND memory structures and related methods are provided. In some embodiments, such structures include a control gate material and a floating gate material disposed between the first insulating layer and the second insulating layer, the control gate material and the control gate material to electrically isolate the control gate material from the floating gate material, An interpoly dielectric (IPD) layer disposed between the floating gate materials, and a tunnel dielectric material deposited on the floating gate material opposite the control gate material.;