IMPROVING METAL CONTACTS TO GROUP IV SEMICONDUCTORS BY INSERTING INTERFACIAL ATOMIC MONOLAYERS

摘要

(IV) junctions by inserting a single layer of Group V or Group III atoms at the interface between the metal and the semiconductor, inserting a bilayer made of one single layer each, or inserting a plurality of such bilayers, A technique for decreasing the number of pixels is disclosed. The resulting low resistivity metal-IV semiconductor junctions have low resistivity in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, As an electrode, and / or as a metal source and / or drain region (or portion thereof) in a field effect transistor (FET). The single layers of Group III and V atoms are aligned layers of atoms that are formed on the surface of the Group IV semiconductor and are chemically bonded to the surface atoms of the Group IV semiconductor.