3D IC APC3D IC BUMP HEIGHT METROLOGY APC

摘要

This disclosure relates to bump metrology methods that rely on advanced process control (APC) to provide bump metrology modules with substrate warping parameters that describe the warpage of the substrate for focus improvement of the bump metrology module . In some embodiments, the method measures one or more substrate warping parameters of a semiconductor substrate. The initial focus height of the lens of the bump metrology module is calculated based on the measured substrate flexural parameters. Next, the lens of the bump metrology module is positioned at the initial focus height, and then the height and critical dimensions of the plurality of bumps on the semiconductor substrate are measured using the lens. By providing the substrate bending parameters to the bump metrology module, the bump metrology module can utilize a real-time process to handle wafer bending to improve throughput and yield.