首页> 外国专利> SILICON INGOT SLICING DEVICE USING MICRO BUBBLE AND WIRE ELECTRIC DISCHARGE AND SILICON SLICING METHOD

SILICON INGOT SLICING DEVICE USING MICRO BUBBLE AND WIRE ELECTRIC DISCHARGE AND SILICON SLICING METHOD

机译:微泡线切割硅锭切片装置及硅切片方法

摘要

A silicon ingot cutting apparatus using micro bubbles and wire discharge machining, and a silicon ingot cutting method. In the silicon ingot cutting apparatus according to the present invention, the water ingestion tank may include a jig attached to the lower surface of the silicon ingot, a conductive adhesive layer adhered between the silicon ingot and the jig, and a purified water DIW; An electrode connected to the silicon ingot; A wire for cutting the silicon ingot while being transported in the vertical direction of the silicon ingot by the wire driving means; An additive injection unit injecting an additive for micro bubble generation into the water tank; And a power supply unit for supplying power to the electrode and the wire so that arc discharge and electrolysis are performed between the silicon ingot and the wire. When the voltage is applied, the electrode surface and the silicon ingot surface In which microbubbles are generated.
机译:使用微气泡和线放电加工的硅锭切割设备以及硅锭切割方法。在根据本发明的硅锭切割设备中,所述吸水槽可包括附接到所述硅锭的下表面的夹具,粘附在所述硅锭和所述夹具之间的导电粘合剂层以及纯净水DIW。电极连接到硅锭;线切割装置,其在通过线驱动机构沿硅锭的铅垂方向输送的同时切割硅锭。添加剂注入单元将用于产生微气泡的添加剂注入水箱中;并且,电源单元用于向电极和导线供电,从而在硅锭和导线之间进行电弧放电和电解。当施加电压时,在其中产生微气泡的电极表面和硅锭表面。

著录项

  • 公开/公告号KR101905692B1

    专利类型

  • 公开/公告日2018-10-12

    原文格式PDF

  • 申请/专利权人 한국에너지기술연구원;

    申请/专利号KR1020160151719

  • 发明设计人 장보윤;김준수;문희찬;최선호;

    申请日2016-11-15

  • 分类号H01L21/78;B28D5/04;H01L21/02;H01L21/67;

  • 国家 KR

  • 入库时间 2022-08-21 12:37:00

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