首页> 外国专利> - - METHOD FOR DETERMINING KEEP-OUT ZONE OF THROUGH SILICON VIA AND COMPUTER-READERBLE RECORDING MEDIUM STORING KEEP-OUT ZONE DETERMINIG PROGRAM

- - METHOD FOR DETERMINING KEEP-OUT ZONE OF THROUGH SILICON VIA AND COMPUTER-READERBLE RECORDING MEDIUM STORING KEEP-OUT ZONE DETERMINIG PROGRAM

机译:通过硅确定悬空区和计算机可读记录介质存储悬空区确定程序的方法

摘要

A method for determining a keep-out zone of a through silicon via according to the present invention comprises the steps of: measuring a capacitance of a through silicon via to derive a capacitance-bias voltage curve; calculating a flattening voltage capacitance of the silicon through electrode by a capacitance equivalent circuit relation to the through silicon via; calculating a flattening voltage of the through silicon via by the flattening voltage capacitance and the capacitance-bias voltage curve; calculating an interface electrical potential between a substrate unit and a dielectric unit of the through silicon via by the flattening voltage; and calculating a keep-out zone of the through silicon via by the interface electrical potential. Therefore, the keep-out zone of the through silicon via manufactured under the same process condition may be quickly and accurately determined.
机译:根据本发明的用于确定贯穿硅通孔的保留区的方法包括以下步骤:测量贯穿硅通孔的电容以得出电容-偏压曲线;通过与硅通孔的电容等效电路关系,计算硅通电极的平坦电压电容;通过平坦化电压电容和电容-偏压曲线计算出硅通孔的平坦化电压;通过平坦化电压计算硅通孔的基板单元和介电单元之间的界面电势;通过界面电位计算出硅通孔的保留区。因此,可以快速而准确地确定在相同工艺条件下制造的硅穿孔的保留区。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号