Method for forming dielectric films of anodized aluminum-silicon alloy having conductivity switching effect

摘要

FIELD: electricity.SUBSTANCE: invention relates to micro- and nanoelectronics, namely, to a method for manufacturing a dielectric layer of MIS structures having the conductivity switching effect basing on an anodized aluminum-silicon alloy film. Technical result is achieved by that in the method for forming a dielectric layer having the effect of switching the conductivity of the dielectric layer by applying a composite material, which is a dielectric where nanoscale silicon clusters are embedded, according to the invention, the material is formed by chemical anodizing of an aluminum-silicon alloy.EFFECT: technical result achieved by the present invention is the creation of a method for forming dielectric films of an anodized aluminum-silicon alloy having the effect of switching the conductivity, fully compatible with the silicon technology of integrated circuits.1 cl, 2 dwg