The silicon pin-photodiode with a high level of sensitivity to the wavelength of 1.06 .mu.m

摘要

The useful model refers to the field of semiconductor devices sensitive to radiation with a wavelength λ = 1.06 μm. The silicon pin photodiode consists of a substrate, a photosensitive region and a guard ring region made in the substrate on the radiation side, a contact layer made on the other side of the substrate, two-layer contacts from the gold layer and a chromium sublayer to the photosensitive region and the guard ring area reflecting the contact system located on the contact layer and consisting of chromium and gold films, the thickness of the chromium film being 5-6 nm, the insulating film and the two-layer antireflection coating consisting of th of a silicon nitride film thickness of 88 nm and silicon dioxide 40 nm thick. The technical result of the utility model is, that a two-layer antireflection coating leads to an increase in the level of monochromatic impulse sensitivity to a wavelength of 1.06 μm and an increase in the yield percentage. 2 ill., 1 table.