Silicon p-i-n-photosensitive element with an increased level of sensitivity to a wavelength of 1.06 μm

摘要

The utility model relates to the field of semiconductor devices sensitive to radiation with a wavelength of λ = 1.06 μm and can be used in various electron-optical equipment in which registration of short laser pulses (10-40 ns) is required. The silicon pin-photosensitive element contains a substrate, a photosensitive region and a guard ring region made in the substrate from the side of radiation exposure, a contact layer made on the other side of the substrate, two-layer contacts made of a gold layer and a chromium sublayer to the photosensitive region and the guard ring region, an insulating film and an antireflection coating consisting of silicon dioxide with a thickness of 0.52 μm and 0.18 μm, respectively, and a reflective contact system located on the contact layer, consisting only from a film of gold (without a chromium sublayer). The utility model provides an increase in the level of monochromatic pulse sensitivity to a wavelength of 1.06 μm. 1 tablet, 1 ill., 1 ave.