METHOD FOR DEFINITION OF THE EROSION SPEED AND DECAYING THIN LAYERS ON PLASMA ELEMENTS FACING PLASMA INSTALLATIONS (VARIANTS)

摘要

FIELD: measurement technology.;SUBSTANCE: invention relates to a method for determining the thickness and controlling the rate of erosion and deposition of thin layers on plasma elements facing plasma elements. Invention provides for the manufacture and placement in a plasma installation of targets from a light and / or heavy element (for example, tungsten on boron or carbon on tungsten) with a given thickness of the surface layer at those locations, in which it is proposed to investigate the rate of erosion and / or deposition, followed by an analysis of the energy spectra reflected at an angle of 30–90° from the exposed targets of hydrogen ions with initial energy in the range 1–20 keV. Thickness of the heavy surface layer is determined from the half-width of the high-energy peak on the energy spectrum, and the thickness of the light surface layer is determined by the peak position on the energy spectrum. Rate of erosion / deposition, as well as when using CPMP, is defined as the ratio of the change in the thickness of the surface layer of the target to the number of pulses or the lifetime of the plasma discharge in the plasma installation.;EFFECT: technical result is an increase in sensitivity, a decrease in the analysis time in determining the rate of erosion and deposition of thin surface layers on plasma elements facing plasma elements.;6 cl, 3 dwg