LANG CHANNEL MOS TRANSISTORS FOR CRAZY LOSS ARMS APPLICATIONS ON A SHORT CHANNEL CMOS CHIP

摘要

Embodiments of the invention include vertically oriented long channel transistors and methods of forming such transistors. In an embodiment, a method of forming such a transistor may include forming a fin on a semiconductor substrate. The embodiments may also include forming a spacer over an upper portion of the fin, and a lower portion of the fin not covered by the spacer may be exposed. The embodiments may also include forming a layer of gate dielectric over the exposed bottom portion of the fin. Then, according to one embodiment, a gate electrode may be deposited. Embodiments may include exposing an upper portion of the fin and forming a first source / drain (S / D, source / drain) region in the upper portion of the fin. The second S / D region may be formed by removing the semiconductor substrate to expose a bottom portion of the fin and forming the second S / D region in the bottom portion of the fin.