Production process and evaluation method for silicon epiwafers

摘要

The present invention provides a silicon wafer manufacturing method having an epitaxial layer grown on a silicon mirror wafer including the steps of using a photoluminescence measuring apparatus to measure a photoluminescence spectrum of the mirror wafer and adjusting the photoluminescence measuring apparatus. such that the emission intensity of a TO line is in the range of 30,000 to 50,000; the irradiation of the silicon epi wafer with an electron beam; measuring a photoluminescence spectrum from an electron beam irradiation region with the photoluminescence measuring apparatus set; and sorting out and assuming a silicon epiwafer having an emission intensity due to a CiCs defect of the photoluminescence spectrum amounting to 0.83% or less of the emission intensity of the TO line, and having an emission intensity due to a CiOi defect thereof 6.5% or less of the emission intensity of the TO line. Accordingly, there is provided a silicon wafer manufacturing method which enables the sorting out of a silicon epiwafer in which white spot defects are caused to an insignificant level in the case of manufacturing an imaging element using the silicon epiwafer.