首页> 外国专利> Chained two-wire data bus consisting of two single-wire data buses, each with several differential levels for bidirectional transmission of lighting data based on the JTAG protocol

Chained two-wire data bus consisting of two single-wire data buses, each with several differential levels for bidirectional transmission of lighting data based on the JTAG protocol

机译:链式两线数据总线,由两个单线数据总线组成,每个总线具有几个差分级别,用于基于JTAG协议的照明数据双向传输

摘要

Differential four-wire data bus system having a differential two-wire data bus (b1, b2, b3) between a bus master (BM) and a plurality of bus nodes (BS1, BS2, BS3), - each bus node (BS1, BS2, BS3) having a JTAG interface to Comprising control of a drive device (PWM1, PWM2, PWM3) of an electrical load (LM, LM1, LM2, LM3), and wherein the JTAG interface is connected to the differential two-wire data bus (b1, b2, b3) and a test controller (TAPC) comprising a state diagram according to the IEEE 1149 standard and in particular one or more of the sub-standards IEEE 1149.1 to IEEE 1149.8 and their further developments and wherein the one JTAG interface of at least one of the bus nodes (BS1, BS2, BS3) for controlling the drive device ( PWM1, PWM2, PWM3) of at least one luminous means (LM; LM1, LM2, LM3) is provided - illumination data being transmitted via the two-wire differential data bus (b1, b2, b3) and the JTAG interface s at least one of the bus nodes (BS1, BS2, BS3) to the drive device (PWM1, PWM2, PWM3) of the at least one light source (LM; LM1, LM2, LM3).
机译:差分四线数据总线系统,在总线主控(BM)和多个总线节点(BS1,BS2,BS3)之间具有差分两线数据总线(b1,b2,b3),-每个总线节点(BS1, BS2,BS3)具有JTAG接口以包括对电负载(LM,LM1,LM2,LM3)的驱动设备(PWM1,PWM2,PWM3)的控制,并且其中,JTAG接口连接至差分两线数据总线(b1,b2,b3)和测试控制器(TAPC),包括根据IEEE 1149标准,尤其是一个或多个子标准IEEE 1149.1至IEEE 1149.8及其进一步发展的状态图,其中一个JTAG提供至少一个总线节点(BS1,BS2,BS3)的接口,用于控制至少一个发光装置(LM; LM1,LM1,LM2,LM3)的驱动设备(PWM1,PWM2,PWM3)-正在传输照明数据通过两线差分数据总线(b1,b2,b3)和JTAG接口s至少有一个总线节点(BS1,BS2,BS3)到驱动设备(至少一个光源(LM; PWM; PWM2; PWM3)。 LM1,LM2,LM3)。

著录项

  • 公开/公告号DE102017100718B4

    专利类型

  • 公开/公告日2018-05-30

    原文格式PDF

  • 申请/专利权人 ELMOS SEMICONDUCTOR AKTIENGESELLSCHAFT;

    申请/专利号DE201710100718

  • 发明设计人 CHRISTIAN SCHMITZ;

    申请日2017-01-16

  • 分类号H04L12/403;G06F13/40;G06F13/42;G06F13;H05B37/02;F21S4/24;

  • 国家 DE

  • 入库时间 2022-08-21 12:34:14

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号