Semiconductor diode and electronic circuitry hereby

摘要

The invention relates to a semiconductor diode formed with a semiconductor body having a first main surface formed of an inner surface on which a first contact layer is arranged and an edge surface, and having a current path from the first contact layer to a second contact layer disposed on one of the first main surface Second main surface, wherein the semiconductor diode is formed by the configuration of the first contact layer or the semiconductor body such that when current flows through the current path, a partial current path, the one with the largest heating per unit volume, and which emanates from a further partial surface of the inner surface is formed the further sub-area beyond a boundary of an inner, preferably central, that is arranged about a central axis, arranged, partial surface of the inner surface to an adjacent to this inner partial surface outer partial surface and as part of this.