METHOD OF INFILTRATION OR CHEMICAL DEPOSITION IN STEAM PHASE

摘要

The present invention relates to a method of infiltration or chemical vapor deposition comprising at least the following step: - formation of silicon carbide in the porosity of a porous substrate or on a surface of a substrate, the substrate being placed in a reaction chamber, the silicon carbide being formed from a gaseous phase introduced into the reaction chamber, this gaseous phase comprising a silicon carbide precursor reactive compound having the following formula: embedded image in which: n is a integer equal to 0 or 1, - m is an integer between 1 and 3, - p is an integer between 0 and 2 with m + p = 3, and - R is -H or -CH3, the ratio C / Si between the number of carbon atoms and the number of silicon atoms in the introduced gas phase being between 2 and 3.