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METHOD OF INFILTRATION OR CHEMICAL VAPOR DEPOSITION USING THE PRECURSOR CI2BNH2 TO FORM BORON NITRIDE

机译:用前驱体CI2BNH2形成氮化硼的渗透或化学气相沉积方法

摘要

The invention relates to a method for manufacturing a composite material comprising at least the following step: forming boron nitride on the surface of one or more carbon or ceramic material son present in a reaction chamber, the nitride boron being formed by infiltration or chemical vapor deposition from a gaseous phase introduced into the reaction chamber comprising, during its introduction into the reaction chamber, a boron nitride precursor reactive compound of formula Cl2BNH2.
机译:本发明涉及一种用于制造复合材料的方法,该方法至少包括以下步骤:在反应室中存在的一种或多种碳或陶瓷材料的表面上形成氮化硼,该氮化硼通过渗透或化学气相沉积形成。由气相引入反应室中的气相,包括在其引入反应室期间的式Cl 2 BNH 2的氮化硼前体反应性化合物。

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