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METHOD OF INFILTRATION OR CHEMICAL VAPOR DEPOSITION USING THE PRECURSOR CI2BNH2 TO FORM BORON NITRIDE
METHOD OF INFILTRATION OR CHEMICAL VAPOR DEPOSITION USING THE PRECURSOR CI2BNH2 TO FORM BORON NITRIDE
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机译:用前驱体CI2BNH2形成氮化硼的渗透或化学气相沉积方法
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摘要
The invention relates to a method for manufacturing a composite material comprising at least the following step: forming boron nitride on the surface of one or more carbon or ceramic material son present in a reaction chamber, the nitride boron being formed by infiltration or chemical vapor deposition from a gaseous phase introduced into the reaction chamber comprising, during its introduction into the reaction chamber, a boron nitride precursor reactive compound of formula Cl2BNH2.
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