首页> 外国专利> METHOD OF INFILTRATION OR CHEMICAL VAPOR DEPOSITION USING THE PRECURSOR CI2BNH2 TO FORM BORON NITRIDE

METHOD OF INFILTRATION OR CHEMICAL VAPOR DEPOSITION USING THE PRECURSOR CI2BNH2 TO FORM BORON NITRIDE

机译:用前驱体CI2BNH2形成氮化硼的渗透或化学气相沉积方法

摘要

The present invention relates to a method of manufacturing a composite material comprising at least the following step: - formation of boron nitride on the surface of one or several wires made of carbon or ceramic material present in a reaction chamber, the boron nitride being formed by chemical vapor deposition or infiltration from a gaseous phase is introduced into the reaction chamber comprising, during its introduction into the reaction chamber, a reactive compound of boron nitride precursor of formula cl2bnh2.
机译:本发明涉及一种制造复合材料的方法,该方法至少包括以下步骤:-在存在于反应室内的由碳或陶瓷材料制成的一根或几根金属丝的表面上形成氮化硼,所述氮化硼通过以下步骤形成:化学气相沉积或气相渗透被引入反应室,在其引入反应室的过程中,其包括式cl 2bnh 2的氮化硼前体的反应性化合物。

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