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METHOD OF INFILTRATION OR CHEMICAL VAPOR DEPOSITION USING THE PRECURSOR CI2BNH2 TO FORM BORON NITRIDE
METHOD OF INFILTRATION OR CHEMICAL VAPOR DEPOSITION USING THE PRECURSOR CI2BNH2 TO FORM BORON NITRIDE
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机译:用前驱体CI2BNH2形成氮化硼的渗透或化学气相沉积方法
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摘要
The present invention relates to a method of manufacturing a composite material comprising at least the following step: - formation of boron nitride on the surface of one or several wires made of carbon or ceramic material present in a reaction chamber, the boron nitride being formed by chemical vapor deposition or infiltration from a gaseous phase is introduced into the reaction chamber comprising, during its introduction into the reaction chamber, a reactive compound of boron nitride precursor of formula cl2bnh2.
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