METHOD OF TREATING WITH A BEAM OF IONS TO PRODUCE A HIGH SCRATCH RESISTANT HIGH SCRATCH ANTIREFLECTION SAPHIR.

摘要

Process for the beam treatment of a mixture of mono- and multicharged ions of a gas produced by an electron cyclotron resonance (ECR) source of a sapphire part where: the ion acceleration voltage of between 10 kV and 100 kV - the implanted dose expressed in ions / cm 2 is between (5 x 1016) x (M / 14) -1/2 and 1017 x (M / 14) -1/2 where M is the atomic mass of 'ion; the displacement velocity VD expressed in cm / s is between 0.025 x (P / D) and 0.1 x (P / D) where P is the beam power expressed in W (Watt), D the beam diameter expressed in cm (centimeter). Advantageously, sapphire coin with high transmittance and scratch-resistant is obtained.