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METHODS FOR PRODUCING A NITRIDE SEMICONDUCTOR PRODUCT, A LIGHT-EMITTING DEVICE, A LIGHT-EMITTING DIODE, A LASER DEVICE AND A LAMP USING THE NITRIDE SEMICONDUCTOR PRODUCT
METHODS FOR PRODUCING A NITRIDE SEMICONDUCTOR PRODUCT, A LIGHT-EMITTING DEVICE, A LIGHT-EMITTING DIODE, A LASER DEVICE AND A LAMP USING THE NITRIDE SEMICONDUCTOR PRODUCT
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机译:使用该氮化物半导体产品生产氮化物半导体产品,发光装置,发光二极管,激光装置和灯的方法
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摘要
A nitride semiconductor product including an n-type layer, a light-emitting layer, and a p-type layer which are formed of a nitride semiconductor and sequentially stacked on a substrate in the above order, the light-emitting layer having a quantum well structure in which a well layer is sandwiched by barrier layers having band gaps wider than the band gap of the well layer. Each barrier layer includes a barrier sublayer C which has been grown at a temperature higher than a growth temperature of the well layer, and a barrier sublayer E which has been grown at a temperature lower than a growth temperature of the barrier sublayer C. The barrier sublayer C is disposed closer to the substrate with respect to the barrier sublayer E.
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