Magnetic random access memory cell with a dual junction for ternary content addressable memory applications

摘要

Include the direction of magnetization with soft magnetic layer (21) this disclosure relates to a kind of MAGNETIC RANDOM ACCESS MEMORY (MRAM) cell (1), therefore is free to be aligned; One first hard ferromagnetic layer (23) has the first storage intensity of magnetization (230); The soft magnetic layer (21) and one first hard ferromagnetic layer (23) for being included between first tunnel barrier layer (22); One second hard ferromagnetic layer (25) has the second storage intensity of magnetization (250); And second included between tunnel barrier layer (24) soft magnetic layer (21) and the second hard ferromagnetic layer (25); Wherein the first storage intensity of magnetization (230), which can be freely positioned at the first high predetermined temperature threshold (TW1) and the second storage intensity of magnetization (250), can freely be oriented in the second predetermined high temperature threshold value (Tw2)); First high predetermined temperature threshold (TW1) is higher than the second predetermined high temperature threshold value (Tw2)). The MRAM ternary content addressable memories (TCAM) disclosed herein that can be used as cell (1) simultaneously store up to three different conditions levels. The MRAM memory cells have a reduceds size and to can be attack at low cost.