Monolithic three dimensional NAND string includes at least one active area of the main surface for being direction of elongation substantially parallel to substrate of multiple control grid electrodes, multiple semiconductor channels, which are attacked each multiple semiconductor channels in petite person end and extended to, is substantially perpendicular to main surface, at least one memory film is located at multiple semiconductor channels of each complex control gate electrode and each corresponding semiconductor channel, and what at least 11 slit trenches extended is substantially perpendicular to the main surface. Each complex control gate electrode has non-linear side wall adjacent at least one active area of at least one the first slit trench.
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