PRODUCTION OF A MICROELECTRONIC DEVICE COMPRISING A MONOCRYSTALLINE SILICON NEMS COMPONENT AND A TRANSISTOR, THE GATE OF WHICH IS PRODUCED IN THE SAME LAYER AS THE MOVABLE STRUCTURE OF SAID COMPONENT

摘要

The present invention relates to those for manufacturing microelectronic component to include, have moveable monocrystalline semiconductor structures and methods for activating and/or detecting movable structure and at least one transistor () in single substrate (100,200), at least one electromechanical component (C groups). This method includes the following steps, in which: provides substrate, this substrate has at least 11 layers (100,200) comprising at least one region (104,204), wherein the transistor of channel region provides; B) etching the second semi-conductive layer (112,212) is placed in the first semi-conductive layer by giving semiconductor material and resting on insulating layer (106,206), component to form at least one pattern (M1) movable structure region relatively above-mentioned in the second semi-conductive layer (8) of single-crystal semiconductor region (112a, 212a) and the transistor of at least one gate pattern (M ' 1).