ULTRA HIGH DENSITY THIN FILM TRANSISTOR SUBSTRATE HAVING LOW LINE RESISTANCE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

The present invention relates to the thin film transistor substrates of a ultra high density to have a low resistance silk structure, to its manufacturing method. Membrane according to the invention transistor substrate includes: a gate wire, a data line, a pixel region, a gate insulation film, semi-conductor layer, an auxiliary gate line and an auxiliary data line. Gate wire continues in a first direction on a substrate. In a second direction on substrate, data line continues. Gate insulation film and semiconductor layer are sequentially laminated, and when being arranged on a position, gate wire and data line intersect, when upper in an island shape, between gate wire and data line. Auxiliary gate line is contacted with a surface of gate wire and middle continuation in a first direction, when having line segment shape Uncrossed with data line. Auxiliary data line contacts with a surface of data line and continues in second direction, when having line segment shape Uncrossed with gate wire. ;Copyright KIPO 2017