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SEMICONDUCTOR DEVICE INCLUDING A RESONANT TUNNELING DIODE STRUCTURE WITH ELECTRON MEAN FREE PATH CONTROL LAYERS COMPRISING A SUPERLATTICE AND ASSOCIATED METHODS
SEMICONDUCTOR DEVICE INCLUDING A RESONANT TUNNELING DIODE STRUCTURE WITH ELECTRON MEAN FREE PATH CONTROL LAYERS COMPRISING A SUPERLATTICE AND ASSOCIATED METHODS
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机译:包括谐振隧道二极管结构的半导体器件,该结构具有包括超晶格和相关方法的电子自由路径控制层
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摘要
A semiconductor device may include at least one double-barrier resonant tunneling diode (DBRTD). The at least one DBRTD may include a first doped semiconductor layer and a first barrier layer on the first doped semiconductor layer and including a superlattice. The superlattice may include stacked groups of layers, each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one DBRTD may further include an intrinsic semiconductor layer on the first barrier layer, a second barrier layer on the intrinsic semiconductor layer, and a second doped semiconductor layer on the second superlattice layer.
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