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VERTICAL RESONANCE TYPE SURFACE EMISSION LASER, AND METHOD FOR MANUFACTURING VERTICAL RESONANCE TYPE SURFACE EMISSION LASER

机译:垂直共振型表面发射激光器以及制造垂直共振型表面发射激光器的方法

摘要

To provide a vertical resonance type surface emission laser that shows the increased reliability.SOLUTION: A vertical resonance type surface emission laser 11 comprises: a substrate 13 having a principal face including a III-V compound semiconductor including Ga and As as a constituting element; and a post 15 provided on the principal face of the substrate 13. The post 15 comprises: a downside spacer region 17 including a III-V compound semiconductor containing Ga and As as a constituting element; and an active layer 19 having a carbon concentration in a range of 2×10cmor more and 5×10cmor less, and having a quantum well structure provided over the downside spacer region 17. The quantum well structure includes: a well layer 19a having a III-V compound semiconductor containing In as a Group III element; and a barrier layer 19b having a III-V compound semiconductor containing Al and Ga as a Group III element. The downside spacer region 17 is provided between the substrate 13 and the active layer 19.SELECTED DRAWING: Figure 1
机译:为了提供一种显示出更高可靠性的垂直共振型表面发射激光器。解决方案:垂直共振型表面发射激光器11包括:衬底13,其主面包括包含Ga和As作为构成元素的III-V族化合物半导体;柱15包括:下部隔离物区域17,其包括含有Ga和As作为构成元素的III-V族化合物半导体;以及下部柱状区域17。活性层19具有碳浓度在2×10cm以上且5×10cm以下的范围,并在下侧隔离物区域17上设置有量子阱结构。该量子阱结构包括:具有III的阱层19a。含有In作为III族元素的-V化合物半导体;势垒层19b具有包含Al和Ga作为III族元素的III-V族化合物半导体。下部间隔区17设置在衬底13和有源层19之间。

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