モーター駆動回路、半導体装置、及び、電子機器

摘要

To suppress an increase in a circuit area while preventing structural breakdown caused by a parasitic bipolar transistor in a motor drive circuit.SOLUTION: An H bridge circuit connected to nodes N1 and N2 for a power source and nodes N3 and N4 for a motor includes, in a P-type semiconductor substrate, a PchMOS transistor that is disposed in an N-type first region and is connected between N1 and N3, an NchMOS transistor that is disposed in an N-type second region and is connected between N2 and N3, a PchMOS transistor that is disposed in an N-type third region and is connected between N1 and N4, and the NchMOS transistor that is disposed in an N-type fourth region and is connected between N2 and N4. A distance between the N-type first region and the N-type third region is smaller than a distance between the N-type first region and the N-type second region, smaller than a distance between the N-type third region and the N-type fourth region, and smaller than a distance between the N-type second region and the N-type fourth region.SELECTED DRAWING: Figure 5