SILICON-CARBIDE SEMICONDUCTOR WAFER AND SILICON-CARBIDE SEMICONDUCTOR DEVICE

摘要

To provide a silicon-carbide semiconductor wafer capable of managing the quality of an electrode while suppressing increase in contact resistance of the electrode, and a silicon-carbide semiconductor device.SOLUTION: A silicon-carbide semiconductor wafer comprises a silicon-carbide substrate, a first electrode, an insulation film, and a second electrode. The silicon-carbide substrate includes a first principal surface, and a second principal surface at an opposite side of the first principal surface. The first electrode and the insulation film are provided on the first principal surface. The second electrode is provided on the second principal surface. A groove is provided on the second principal surface. The second principal surface includes a first region and a second region that are separated by the groove. The groove is defined by a first side face communicating to the first region, a second side face communicating to the second region, and a bottom face communicating to each of the first side face and the second side face. The second electrode includes a first portion in contact with the first region, a second portion in contact with the second region, and a third portion in contact with the bottom face. The third portion is separated from each of the first portion and the second portion.SELECTED DRAWING: Figure 3