首页> 外国专利> HEAT DISSIPATING SUBSTRATE, HEAT DISSIPATING SUBSTRATE ELECTRODE, SEMICONDUCTOR PACKAGE, SEMICONDUCTOR MODULE, AND MANUFACTURING METHOD OF HEAT DISSIPATING SUBSTRATE

HEAT DISSIPATING SUBSTRATE, HEAT DISSIPATING SUBSTRATE ELECTRODE, SEMICONDUCTOR PACKAGE, SEMICONDUCTOR MODULE, AND MANUFACTURING METHOD OF HEAT DISSIPATING SUBSTRATE

机译:散热基体,散热基体电极,半导体封装,半导体模块以及散热基体的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a heat dissipating substrate in which a decrease in the thermal conductivity in the thickness direction is small after a heat cycle test.SOLUTION: A manufacturing method of a heat dissipating substrate includes coating an insert metal on the inner wall surface of a through hole penetrating a plate-shaped core substrate made of a first metal in a thickness direction, filling the through hole with an insert made of a second metal having a thermal conductivity higher than that of the first metal, disposing a plate-like heat conductive member made of a third metal having a thermal conductivity higher than that of the first metal on the front surface and the back surface of the main body to form a laminate, and pressing and heating the laminate to a temperature lower than the melting point of all of the first metal, the second metal, and the third metal.SELECTED DRAWING: None
机译:解决的问题:提供一种散热基板,该基板在热循环试验后在厚度方向上的热导率减小很小。解决方案:散热基板的制造方法包括在内壁上涂覆插入金属。在厚度方向上穿透由第一金属制成的板状芯基板的通孔的表面,用由导热率高于第一金属的第二金属制成的插入物填充通孔,并设置板-由在主体的正面和背面上具有比第一金属的导热率高的第三导热率的第三金属制成的类似导热部件,以形成层压体,并且将层压体加压并加热到低于熔化的温度第一种金属,第二种金属和第三种金属的所有点。

著录项

  • 公开/公告号JP2018182287A

    专利类型

  • 公开/公告日2018-11-15

    原文格式PDF

  • 申请/专利权人 HANDOTAI NETSU KENKYUSHO:KK;

    申请/专利号JP20170222732

  • 发明设计人 FUKUI AKIRA;

    申请日2017-11-20

  • 分类号H01L23/36;H01L23/12;H05K7/20;

  • 国家 JP

  • 入库时间 2022-08-21 12:22:09

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号