Fluorinated compositions for improving ion source performance in nitrogen ion implantation

摘要

Composition for performing nitrogen ion implantation that avoids the occurrence of severe glitches when another ion implantation operation that is prone to glitches, such as arsenic and / or phosphorus ion species, is performed following nitrogen ion implantation , Methods and apparatus are described. The nitrogen ion implantation operation is preferably performed using a nitrogen ion implantation composition that is introduced into or formed in the ion source chamber of the ion implantation system, the nitrogen ion implantation composition comprising: Nitrogen (N2) dopant gas and other fluorinated hydrocarbons of the general formula SF6, NF3, N2F4, F2, SiF4, WF6, PF3, PF5, AsF3, AsF5, CF4 and CxFy (x ≧ 1, y ≧ 1) , HF, COF2, OF2, BF3, B2F4, GeF4, XeF2, O2, N2O, NO, NO2, N2O4, and a glitch suppression gas containing one or more selected from the group consisting of O3, and optionally hydrogen Gas, such as H2, NH3, N2H4, B2H6, AsH3, PH3, SiH4, Si2H6, H2S, H2Se, CH And other hydrocarbons of the general formula of CxHy (x ≧ 1, y ≧ 1), and the hydrogen-containing gas containing one or more selected from the group consisting of GeH4. [Selection] Figure 1