首页> 外国专利> DRIVE CIRCUIT OF HIGH-SIDE TRANSISTOR, CONTROL CIRCUIT OF DC/DC CONVERTER ARRANGED BY USE THEREOF, AND DC/DC CONVERTER

DRIVE CIRCUIT OF HIGH-SIDE TRANSISTOR, CONTROL CIRCUIT OF DC/DC CONVERTER ARRANGED BY USE THEREOF, AND DC/DC CONVERTER

机译:高侧晶体管的驱动电路,使用其配置的DC / DC转换器的控制电路以及DC / DC转换器

摘要

To provide a drive circuit capable of setting a high-side transistor to OFF in the event of abnormality.SOLUTION: A drive circuit 400 drives an N channel or NPN-type high-side transistor 302. The drive circuit comprises: a level shift circuit 410 including an open-drain type differential conversion circuit 412 which converts an input signal Sto a differential signal S/S, and a latch circuit 414 which transitions its state in response to a differential output S/Sof the differential conversion circuit 412 as a trigger; a driver 420 for driving the high-side transistor 302 according to an output of the level shift circuit 410; a bootstrap circuit 430 for generating a bootstrap voltage Vwhich makes an upside power source of the driver; and a protection circuit 440 which works on at least part of the drive circuit 400 except for the input signal Sso that the high-side transistor 302 is turned off when an abnormality is sensed.SELECTED DRAWING: Figure 2
机译:提供一种能够在异常情况下将高端晶体管设置为截止的驱动电路。解决方案:驱动电路400驱动N沟道或NPN型高端晶体管302。该驱动电路包括:电平转换电路410包括:漏极开路型差分转换电路412,其将输入信号S转换为差分信号S / S;以及锁存电路414,其响应于作为触发的差分转换电路412的差分输出S / S而转变其状态。 ;驱动器420,用于根据电平移位电路410的输出来驱动高侧晶体管302;自举电路430,用于产生自举电压V,该自举电压V成为驱动器的上部电源;以及保护电路440,其在驱动电路400的至少一部分上起作用,除了输入信号Sso,以便当感测到异常时高侧晶体管302被关断。

著录项

  • 公开/公告号JP2019017210A

    专利类型

  • 公开/公告日2019-01-31

    原文格式PDF

  • 申请/专利权人 ROHM CO LTD;

    申请/专利号JP20170133900

  • 发明设计人 SHINOZAKI YUICHI;

    申请日2017-07-07

  • 分类号H02M3/155;

  • 国家 JP

  • 入库时间 2022-08-21 12:20:57

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