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Method of determining the solid-liquid interface height between single crystal and raw material melt and method of manufacturing single crystal

机译:确定单晶与原料熔体之间的固液界面高度的方法和制造单晶的方法

摘要

PROBLEM TO BE SOLVED: To provide a method capable of preventing the influence of the extension of a wire on a calculation result when determining a solid-liquid interface shape between a single crystal and a raw material melt.SOLUTION: The method for calculating a solid-liquid interface height between a single crystal and a raw material melt when growing the single crystal comprises the steps of: measuring the measurement weight of the single crystal using crystal weight detecting means during pulling the single crystal; calculating the calculation weight of the single crystal from the crystal length and crystal diameter of the single crystal during or after pulling the single crystal; and calculating the solid-liquid interface height on the basis of a difference between the measurement weight and the calculation weight. In the step of calculating the calculation weight, a crystal length calculated by correcting the extension of a wire in the length of the single crystal calculated from the rotation angle of a wire drum or a crystal length measured using means for directly measuring a position of a seed crystal is used as the crystal length of the single crystal.SELECTED DRAWING: Figure 1
机译:解决的问题:提供一种在确定单晶与原料熔体之间的固液界面形状时能够防止线的延伸对计算结果的影响的方法。解决方案:一种用于计算固体的方法。 -当生长单晶时,单晶与原料熔体之间的液体界面高度包括以下步骤:在提拉单晶期间,使用晶体重量检测装置测量单晶的测量重量;根据在拉制单晶期间或之后的单晶的晶体长度和晶体直径计算单晶的计算权重;根据测定重量与计算重量之差,算出固液界面高度。在计算权重的步骤中,通过校正由线材鼓的旋转角度计算出的单晶的长度中的线材的延伸而计算出的晶体长度或使用直接测量晶格位置的装置测量的晶体长度。籽晶用作单晶的晶体长度。选定的图:图1

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