VERTICAL MAGNETIZATION FERROMAGNETIC SEMICONDUCTOR HETERO-JUNCTION ELEMENT, MAGNETIC MEMORY DEVICE ARRANGED BY USE THEREOF, AND SPIN LOGIC ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a magnetic hetero-junction element which has a high perpendicular magnetic anisotropy energy and by which a pure and good-quality interface can be achieved between a ferromagnetic layer and a non-magnetic layer.SOLUTION: A magnetic hetero-junction element comprises a substrate, a ferromagnetic layer provided on the substrate or through an underlying layer thereover, and a non-magnetic layer provided on the ferromagnetic layer, and has a structure in which the ferromagnetic layer and the non-magnetic layer are laminated in [001] orientation. In the magnetic hetero-junction element, the ferromagnetic layer includes an iron-containing ferromagnetic material; the non-magnetic layer includes a compound selected from a group consisting of ZnSe, ZnS, and a I-III-VI2 type chalcopyrite type compound semiconductor; the interface crystal magnetic anisotropic constant (Ks) is over 0.78 mJ/mat a junction interface of the ferromagnetic layer and the non-magnetic layer; and the ferromagnetic layer is a vertical magnetization layer.SELECTED DRAWING: Figure 1