半導体装置、電源装置、増幅器及び半導体装置の製造方法

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having high breakdown voltage and high reliability even when carrying out heat treatment for ohmic-contacting with an electrode.;SOLUTION: The semiconductor device comprises: a first semiconductor layer formed of a compound semiconductor on a substrate; a second semiconductor layer formed of the compound semiconductor on the first semiconductor layer; a source electrode and a drain electrode formed on the second semiconductor layer; a Ta film covering the source electrode and the drain electrode; and a gate electrode formed on the second semiconductor layer, therein the Ta film is formed of α-Ta, or the Ta film contains more α-Ta than β-Ta.;SELECTED DRAWING: Figure 2;COPYRIGHT: (C)2019,JPO&INPIT