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Negative type photoresist composition for KrF laser for semiconductor pattern formation
Negative type photoresist composition for KrF laser for semiconductor pattern formation
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机译:用于半导体图案形成的KrF激光器的负型光刻胶组合物
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摘要
Provided is a negative photoresist composition for a KrF laser for semiconductor pattern formation, which includes a predetermined compound in order to improve the properties of a conventional negative photoresist, thereby realizing high transparency, high resolution and an excellent profile, even in the presence of an exposure source having a short wavelength compared to the conventional negative photoresist, and is thus suitable for use in semiconductor processing.
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