MANUFACTURING METHOD OF INVERSE CONDUCTING TYPE INSULATION GATE BIPOLAR TRANSISTOR, AND INVERSE CONDUCTING TYPE INSULATION GATE BIPOLAR TRANSISTOR

摘要

To provide a manufacturing method of an inverse conducting type insulation gate bipolar transistor, and the inverse conducting type insulation gate bipolar transistor in which an IGBT and a diode are formed on the same semiconductor substrate with optimum electrical characteristics.SOLUTION: An IGBT region 21 and an FWD region 22 are provided on the same semiconductor substrate. A plurality of trenches 2 are provided in a front surface of an ntype semiconductor substrate at predetermined intervals. P-channel regions 5-1 are provided at predetermined intervals in a longitudinal direction of the trenches 2 between the adjacent trenches 2, thereby configuring a MOS gate. In the IGBT region 21, the p-channel region 5-1 and an ndrift region 1 are alternately disposed in the longitudinal direction of the trenches 2. In the FWD region 22, the p-channel region 5-1 and a pthinning region 5-2 are alternately disposed in the longitudinal direction of the trenches 2. A first pitch x11 of the p-type channel regions 5-1 in the longitudinal direction of the trenches 2 in the IGBT region 21 is shorter than a second pitch x21 of the p-type channel regions 5-1 in the longitudinal direction of the trenches 2 in the FWD region 22.SELECTED DRAWING: Figure 1