Porous semiconductor layer, paste for porous semiconductor layer, and dye-sensitized solar cell

摘要

A porous semiconductor layer contains anatase-type titanium oxide particles (A) which have an average primary particle size of 1 nm to 70 nm, and particles (B) obtained by coating surfaces of rutile-type titanium oxide particles, which have an average primary particle size of 100 nm to 1,000 nm, with an insulating material.