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Uniform imprint pattern transfer method for sub-20 nm design
Uniform imprint pattern transfer method for sub-20 nm design
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机译:用于20 nm以下设计的均匀压印图案转移方法
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摘要
Methods of increasing etch selectivity in imprint lithography are described which employ material deposition techniques that impart a unique morphology to the multi-layer material stacks, thereby enhancing etch process window and improving etch selectivity. For example, etch selectivity of 50:1 or more between patterned resist layer and deposited metals, metalloids, or non-organic oxides can be achieved, which greatly preserves the pattern feature height prior to the etch process that transfers the pattern into the substrate, allowing for sub-20 nm pattern transfer at high fidelity.
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