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ABRASIVE COMPOSITION AND METHOD FOR SELECTIVELY POLISHING SILICON NITRIDE FILM ON SILICON OXIDE FILM
ABRASIVE COMPOSITION AND METHOD FOR SELECTIVELY POLISHING SILICON NITRIDE FILM ON SILICON OXIDE FILM
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机译:在氧化硅膜上选择性抛光硅氮化膜的磨料组合物和方法
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摘要
Stable aqueous polishing compositions that can selectively polish silicon nitride (SiN) films and nearly stop (or polish at very low rates) on silicon oxide films are provided herein. The compositions comprise an anionic abrasive, a nitride removal rate enhancer containing a carboxyl or carboxylate group, water, and optionally, an anionic polymer. The synergistic combination of anionic (negatively charged) abrasives and the nitride removal rate enhancer provide beneficial charge interactions with the dielectric films during CMP, a high SiN rate and selectivity enhancement (over oxide), and stable colloidal dispersed slurries.
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