Magnetization reversal element using exchange bias, magnetoresistance effect element using exchange bias, magnetic memory using exchange bias, nonvolatile logic circuit, and magnetic neuron element

摘要

In this exchange bias utilization type magnetization reversal element, the antiferromagnetism which consists of 1st area | region (1a) and 2nd area | region antiferromagnetism (1b), and 3rd area | region antiferromagnetism (1c) located between those area | regions. In the driving layer antiferromagnetic (1) and the third region antiferromagnetic (1c), the magnetic coupling layer antiferromagnetic (2) magnetically coupled to the antiferromagnetic driving layer antiferromagnetic (1), A first electrode layer antiferromagnetic (5) bonded to the first region antiferromagnetic (1a); and a second electrode layer (6) bonded to the second region antiferromagnetic (1b).